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碳化硅(SiC) MOSFET使用一种全新技术,与硅相比,该技术提供了卓越的开关性能和更高的可靠性。此外,低导通电阻和紧凑的芯片尺寸确保了低电容和栅极电荷。因此,系统优势包括最高效率、更快的工作频率、更高的功率密度、更低的EMI和更小的系统尺寸。
Model Name | Current | R(on) | Vgs | Package | Status |
ASC100N1700MT3 | 100A | 25mohm | 18V | TO-247-3 | Product |
ASC100N1700MT3PB | 100A | 25mohm | 15V | TO-247-3 | Product |
ASC100N1700MT4 | 100A | 25mohm | 18V | TO-247-4 | Product |
ASC100N1700MT4i | 100A | 25mohm | 18V | TO-247-4 | Product |
ASC100N1700MT4L | 100A | 25mohm | 18V | TO-247-4 | Product |
ASC100N1700MT4PB | 100A | 25mohm | 15V | TO-247-4 | Product |
ASC40N1700MT3 | 40A | 72mohm | 18V | TO-247-3 | Product |
ASC40N1700MT4 | 40A | 72mohm | 18V | TO-247-4 | Product |
ASC5N1700MT3PB | 5A | 750mohm | 12V | TO-247-3 | Product |
ASC5N1700MT7PB | 5A | 750mohm | 12V | TO-263-7 | Product |
ASC1N1700MF3PB | 1A | 10000mohm | 12V | TO-220F | Product |