Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliability compared with silicon.
Silicon carbide (SiC) MOSFET uses a new technology, which provides excellent switching performance and higher reliability compared with silicon. In addition, low on-resistance and compact chip size ensure low capacitance and gate charge. Therefore, the advantages of the system include the highest efficiency, faster operating frequency, higher power density, lower EMI and smaller system size.
Model Name | Current | R(on) | Vgs | Package | Status |
ASC100N1700MT3 | 100A | 25mohm | 18V | TO-247-3 | Product |
ASC100N1700MT3PB | 100A | 25mohm | 15V | TO-247-3 | Product |
ASC100N1700MT4 | 100A | 25mohm | 18V | TO-247-4 | Product |
ASC100N1700MT4i | 100A | 25mohm | 18V | TO-247-4 | Product |
ASC100N1700MT4L | 100A | 25mohm | 18V | TO-247-4 | Product |
ASC100N1700MT4PB | 100A | 25mohm | 15V | TO-247-4 | Product |
ASC40N1700MT3 | 40A | 72mohm | 18V | TO-247-3 | Product |
ASC40N1700MT4 | 40A | 72mohm | 18V | TO-247-4 | Product |
ASC5N1700MT3PB | 5A | 750mohm | 12V | TO-247-3 | Product |
ASC5N1700MT7PB | 5A | 750mohm | 12V | TO-263-7 | Product |
ASC1N1700MF3PB | 1A | 10000mohm | 12V | TO-220F | Product |